Numerical simulation characterization of 50nm MOSFET incorporating dielectric pocket (DP-MOSFET)

Abstract

10.1063/1.3377887Characterization of a metal-oxide-semiconductor field effect transistor incorporating dielectric pocket (DP) for suppression of short-channel effect (SCE) is demonstrated by using numerical simulation. An analysis of different uniform body doping from 1017 cm-3 to 1019 cm-3 of 50 nm channel length (Lg) with DP incorporated between the channel and source/drain has been done successfully. The DP has suppressed short channel effect (SCE) without the needs of decreasing the junction depth. A reduction of leakage current (IOFF) was obtained in MOSFET with DP without altering the drive current (ION). A very low leakage current is obtained for DP device with drain voltage (VDS) of 0.1 V. Consequently, the threshold voltage (VT) is increase accordingly with the increasing of body doping. A better control of VT roll-off was also demonstrated better for MOSFET with DP compare to conventional MOSFET. Thus, the incorporation of DP will enhance the electrical performance and give a very good control of the SCE for scaling the MOSFET in nanometer regime for future development of nanoelectronics product.