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Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET

Saad, Ismail and Ismail, Razali and Arora, Vijay (2007) Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET. In: 23rd Regional Conferences Solid State Science and Technology 2007 (RCSSST 2007), 2007, Johor Bahru.

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Abstract

A process of making a symmetrical self-aligned n-type vertical double-gate MOSFET (n-VDGM) over a silicon pillar is revealed. This process utilizes the technique of oblique rotating ion implantation (ORI). The self-aligned region forms a sharp vertical channel profile and decreases the channel length Lg. A tremendous improvement in the drive-on current is noted.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:oblique rotating ion implantation (ORI), nanoscale vertical
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:14144
Deposited By: Mrs Liza Porijo
Deposited On:18 Aug 2011 09:31
Last Modified:12 Sep 2017 08:17

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