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Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET

Saad, Ismail and Ismail, Razali and Arora, Vijay (2007) Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET. In: 23rd Regional Conferences Solid State Science and Technology 2007 (RCSSST 2007), 2007, Johor Bahru.

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Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:oblique rotating ion implantation (ORI), nanoscale vertical
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:14144
Deposited By: Liza Porijo
Deposited On:18 Aug 2011 09:31
Last Modified:27 Nov 2012 01:06

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