Saad, Ismail and Ismail, Razali and Arora, Vijay (2007) Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET. In: 23rd Regional Conferences Solid State Science and Technology 2007 (RCSSST 2007), 2007, Johor Bahru.
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Abstract
A process of making a symmetrical self-aligned n-type vertical double-gate MOSFET (n-VDGM) over a silicon pillar is revealed. This process utilizes the technique of oblique rotating ion implantation (ORI). The self-aligned region forms a sharp vertical channel profile and decreases the channel length Lg. A tremendous improvement in the drive-on current is noted.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | oblique rotating ion implantation (ORI), nanoscale vertical |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 14144 |
| Deposited By: | Liza Porijo |
| Deposited On: | 18 Aug 2011 09:31 |
| Last Modified: | 12 Sep 2017 08:17 |
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