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Design of 100nm pMOSFET with a SiGe heterostructure channel

Ismail, Razali (2007) Design of 100nm pMOSFET with a SiGe heterostructure channel. In: IEEE Regional Symposium on Microelectronics (RSM2007), 2007, Penang.

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Abstract

The conference series has become the prominent international forum on semiconductor electronics embracing all aspects of the semiconductor technology from circuit device, modeling and simulation, photonics and sensor technology, MEMS technology, process and fabrication, packaging technology and manufacturing, failure analysis and reliability, material and devices and nanoelectronics.

Item Type:Conference or Workshop Item (Paper)
Uncontrolled Keywords:100nm pMOSFET, SiGe heterostructure channel
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:13884
Deposited By: Mrs Liza Porijo
Deposited On:15 Aug 2011 07:48
Last Modified:03 Aug 2017 03:54

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