Ismail, Razali (2007) Design of 100nm pMOSFET with a SiGe heterostructure channel. In: IEEE Regional Symposium on Microelectronics (RSM2007), 2007, Penang.
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Abstract
The conference series has become the prominent international forum on semiconductor electronics embracing all aspects of the semiconductor technology from circuit device, modeling and simulation, photonics and sensor technology, MEMS technology, process and fabrication, packaging technology and manufacturing, failure analysis and reliability, material and devices and nanoelectronics.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | 100nm pMOSFET, SiGe heterostructure channel |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 13884 |
| Deposited By: | Liza Porijo |
| Deposited On: | 15 Aug 2011 07:48 |
| Last Modified: | 03 Aug 2017 03:54 |
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