Ahmadi, Mohammad Taghi and Fallahpour, Amir Hossein and Allahdadian, Javad and Kouhnavard, Mojgan and Ismail, Razali (2009) Analytical study of carriers in silicon nanowires. MASAUM Journal of Basic and Applied Sciences , 1 (2). pp. 233-239.
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Official URL: https://www.researchgate.net/publication/260835448...
The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately doped nanostructure. However, the ultimate drift velocity is the Fermi velocity for degenerately doped nanostructures. Quantum and high-field effects controlling the transport of carrier in nanostructures are described. The results obtained are applied to the modeling of a nanowire transistor
|Uncontrolled Keywords:||silicon nanowire, carrier transport, carrier velocity, nanowire transistor|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Siti Khairiyah Nordin|
|Deposited On:||12 Aug 2011 02:06|
|Last Modified:||13 Feb 2017 00:46|
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