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Analytical study of carriers in silicon nanowires

Ahmadi, Mohammad Taghi and Fallahpour, Amir Hossein and Allahdadian, Javad and Kouhnavard, Mojgan and Ismail, Razali (2009) Analytical study of carriers in silicon nanowires. MASAUM Journal of Basic and Applied Sciences , 1 (2). pp. 233-239.

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Abstract

The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately doped nanostructure. However, the ultimate drift velocity is the Fermi velocity for degenerately doped nanostructures. Quantum and high-field effects controlling the transport of carrier in nanostructures are described. The results obtained are applied to the modeling of a nanowire transistor

Item Type:Article
Uncontrolled Keywords:silicon nanowire, carrier transport, carrier velocity, nanowire transistor
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:13682
Deposited By: Siti Khairiyah Nordin
Deposited On:12 Aug 2011 02:06
Last Modified:12 Aug 2011 02:06

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