Ahmadi, Mohammad Taghi and Fallahpour, Amir Hossein and Allahdadian, Javad and Kouhnavard, Mojgan and Ismail, Razali (2009) Analytical study of carriers in silicon nanowires. MASAUM Journal of Basic and Applied Sciences , 1 (2). pp. 233-239.
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Official URL: https://www.researchgate.net/publication/260835448...
Abstract
The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately doped nanostructure. However, the ultimate drift velocity is the Fermi velocity for degenerately doped nanostructures. Quantum and high-field effects controlling the transport of carrier in nanostructures are described. The results obtained are applied to the modeling of a nanowire transistor
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | silicon nanowire, carrier transport, carrier velocity, nanowire transistor |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 13682 |
| Deposited By: | Siti Khairiyah Nordin |
| Deposited On: | 12 Aug 2011 02:06 |
| Last Modified: | 13 Feb 2017 00:46 |
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