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Harmonic responses in 2DEG A1GaAs/GaAs hemt devices due to plasma wave interactions

Hashim, Abdul Manaf and Seiya, Kasai and Hideki, Hasegawa (2009) Harmonic responses in 2DEG A1GaAs/GaAs hemt devices due to plasma wave interactions. Jurnal Teknologi, 50 (D). pp. 33-41. ISSN 2180-3722

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Abstract

Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, ?p, lie in the terahertz (THz) range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short-channel High-Electron-Mobility Transistor (HEMT) and that of the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results.

Item Type:Article
Uncontrolled Keywords:surface plasma waves, drift plasma, THz device, GaAs, HEMT
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:13362
Deposited By: S.N.Shahira Dahari
Deposited On:04 Aug 2011 07:27
Last Modified:21 Nov 2013 00:26

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