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Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition

Hashim, Abdul manaf and Kanji, Yasui (2009) Carbonization layer grown by acetylene reaction on SI(100) and (111) surface using low pressure chemical vapor deposition. Jurnal Teknologi, 50 (D). pp. 23-32. ISSN 2180-3722

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Abstract

Surface carbonization on Si(100) and Si(111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependences of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates, pressures, temperatures and times were evaluated using X-ray diffractometry and electron probe microanalysis analytical techniques. The stoichiometric carbonization layer with good crystallinity, crystal orientation and bonding state was successfully formed at 1100 °C with C2H2 flow rate of 2 sccm and reaction pressure of 0.3 Torr.

Item Type:Article
Uncontrolled Keywords:X-ray diffraction, chemical vapor deposition, semiconducting silicon compounds
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:13349
Deposited By: S.N.Shahira Dahari
Deposited On:04 Aug 2011 07:28
Last Modified:21 Nov 2013 00:32

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