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Design and analysis of nanoscale vertical MOSFET using oblique rotating implantation (ORI) method with reduced parasitic capacitance

Ismail, Razali and Saad, Ismail and Ahmadi, M. Taghi and Munawar, A. R. (2009) Design and analysis of nanoscale vertical MOSFET using oblique rotating implantation (ORI) method with reduced parasitic capacitance. In: Nanoscience and Nanotechnology. AIP Conference Proceedings, 1136 . Amer Inst Physics, New York, pp. 79-83. ISBN 978-0-7354-0673-5

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Abstract

The design and analysis of an enhanced performance of vertical MOSFET is revealed by adopting the oblique rotating ion implantation (ORI) method combined with fillet oxidation (FILOX) technology. These CMOS compatible processes have formed the symmetrical self-aligned source/drain regions over the silicon pillar with sharp vertical channel profiles. Accordingly, an increased numbers of electrons in the channel with decreased channel length (L(g)) have shown to improved the threshold voltage, sub-threshold swing, drive-on current, leakage current, DIBL and drain saturation current significantly. The drain overlap capacitance is a factor of 0.2 lower and the source overlap capacitance is a factor of 1.5 lower than standard vertical MOSFETs.

Item Type:Book Section
Additional Information:International Conference on Nanoscience and Nanotechnology (NANO-SciTech 2008); Location: Selangor, MALAYSIA; Date: NOV 18-21, 2008; ISSN : 0094-243X
Uncontrolled Keywords:vertical MOSFET, DIBL, double gate, ion implantation, Nanoscale FET
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:13346
Deposited By: Ms Zalinda Shuratman
Deposited On:05 Aug 2011 03:10
Last Modified:05 Aug 2011 03:10

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