Taghi Ahmadi, Mohammad and Houg Lau, Hui and Ismail, Razali and Arora, Vijay K. (2009) Current–voltage characteristics of a silicon nanowire transistor. Microelectronics Journal, 40 (3). pp. 547-549. ISSN 00262692
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Official URL: http://dx.doi.org/10.1016/j.mejo.2008.06.060
The nanowires and nanotubes are being considered as the best candidates for high-speed applications. It is shown that the high mobility does not always lead to higher carrier velocity. The ultimate drift velocity due to the high-electric-field streaming are based on the asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field. The limited drift velocity is found to be appropriate thermal velocity for a nondegenerately doped sample of silicon, increasing with the temperature, but independent of carrier concentration. However, the limited drift velocity is the Fermi velocity for a degenerately doped silicon nanowire, increasing with carrier concentration but independent of temperature. The results obtained are applied to the modeling of the current-voltage characteristics of a nanowire transistor.
|Uncontrolled Keywords:||current-voltage characteristics, drift velocity, nanowire transistor, saturation velocity|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Ms Zalinda Shuratman|
|Deposited On:||03 Aug 2011 07:16|
|Last Modified:||03 Aug 2011 07:16|
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