Universiti Teknologi Malaysia Institutional Repository

Current–voltage characteristics of a silicon nanowire transistor

Taghi Ahmadi, Mohammad and Houg Lau, Hui and Ismail, Razali and Arora, Vijay K. (2009) Current–voltage characteristics of a silicon nanowire transistor. Microelectronics Journal, 40 (3). pp. 547-549. ISSN 00262692

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Official URL: http://dx.doi.org/10.1016/j.mejo.2008.06.060


The nanowires and nanotubes are being considered as the best candidates for high-speed applications. It is shown that the high mobility does not always lead to higher carrier velocity. The ultimate drift velocity due to the high-electric-field streaming are based on the asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field. The limited drift velocity is found to be appropriate thermal velocity for a nondegenerately doped sample of silicon, increasing with the temperature, but independent of carrier concentration. However, the limited drift velocity is the Fermi velocity for a degenerately doped silicon nanowire, increasing with carrier concentration but independent of temperature. The results obtained are applied to the modeling of the current-voltage characteristics of a nanowire transistor.

Item Type:Article
Uncontrolled Keywords:current-voltage characteristics, drift velocity, nanowire transistor, saturation velocity
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:13297
Deposited By: Zalinda Shuratman
Deposited On:03 Aug 2011 07:16
Last Modified:03 Aug 2011 07:16

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