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Body doping influence in vertical MOSFET design

Riyadi, Munawar A. and Napiah, Zul Atfyi F. M. and Suseno, Jatmiko E. and Saad, Ismail and Ismail, Razali (2009) Body doping influence in vertical MOSFET design. In: 2009 Innovative Technologies in Intelligent Systems and Industrial Applications. Article number 5224233 . Institute of Electrical and Electronics Engineers, New York, pp. 92-95. ISBN 978-142442887-8

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Official URL: http://dx.doi.org/10.1109/CITISIA.2009.5224233

Abstract

The vertical MOSFET is considered as an alternative to nanoscale device structure, due to relaxeddependence on lithography and easier double gate realization. In this paper, the influence of body doping concentration variation in vertical MOSFET developed using oblique-rotating implantation (ORI) method is investigated. For this purpose, two-dimensional process simulation was made using TCAD tools for several Nsub, namely 1, 4, 7 ad 10.10 18 cm-3, respectively. The electrical characteristic and short channel effect i.e. DIBL and subthreshold swing, for different body doping were deliberated. The result also suggests the required change in the pillar design in maintaining the gate channel.

Item Type:Book Section
Additional Information:2009 Innovative Technologies in Intelligent Systems and Industrial Applications, CITISIA 2009; Kuala Lumpur; 25 July 2009 through 26 July 2009
Uncontrolled Keywords:body doping, double gate, electrical characteristic, gate channel, nanoscale device
Subjects:Q Science > QA Mathematics > QA75 Electronic computers. Computer science
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:13240
Deposited By: Ms Zalinda Shuratman
Deposited On:27 Jul 2011 01:22
Last Modified:27 Jul 2011 01:22

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