Universiti Teknologi Malaysia Institutional Repository

Ballistic saturation velocity of quasi-2D low-dimensional nanoscale field effect transistor (FET)

Ismail, Razali and Saad, Ismail and Ahmadi, M. Taghi and Munawar, A. R. and Arora, V. K. (2009) Ballistic saturation velocity of quasi-2D low-dimensional nanoscale field effect transistor (FET). In: Nanoscience and Nanotechnology. AIP Conference Proceedings, 1136 . Amer Inst Physics, New York, pp. 302-306. ISBN 978-0-7354-0673-5

Full text not available from this repository.

Official URL: http://dx.doi.org/10.1063/1.3160152

Abstract

The saturation velocity is found to be ballistic regardless of the device dimensions. The ballistic intrinsic velocity is based on streamlining of the randomly oriented velocity vectors in zero electric field. In the degenerate realm, the saturation velocity is shown to be the Fermi velocity that is independent of temperature but strongly dependent on carrier concentration. In the non-degenerate realm, it's becomes thermal velocity that depends only on the ambient temperature. The drain carrier velocity is revealed to be smaller than the saturation velocity due to finite electric field at the drain-end. An excellent agreement is revealed when comparing the model to 80nm fabricated MOSFET.

Item Type:Book Section
Uncontrolled Keywords:ballistic transport, fermi velocity, Nanoscale FET, low-dimensional device
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:13220
Deposited By: Ms Zalinda Shuratman
Deposited On:22 Jul 2011 01:51
Last Modified:22 Jul 2011 01:51

Repository Staff Only: item control page