Ismail, Razali and Ahmadi, Mohammad Taghi and Saad, Ismail R. and Riyadi, Munawar Agus (2009) Analytical study of drift velocity in p-type silicon nanowires. In: AIP Conference Proceedings. American Institute of Physics, USA, pp. 264-268. ISBN 978-073540673-5
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Official URL: http://dx.doi.org/10.1063/1.3160144
An analytical model that captures the essence of physical processes in a p- type silicon nanowire transistor is presented. The model covers seamlessly the whole range of transport from driftdiffusion to ballistic. The mobility and saturation velocity are the two important parameters that control the charge transport in a MOSFET channel. It is shown that the high mobility does not always lead to higher carrier velocity. The ultimate drift velocity due to the high electric-field streaming are based on the asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field. The limited drift velocity is found to be appropriate thermal velocity for a nondegenerately doped sample of silicon, increasing with the temperature, but independent of carrier concentration. However, the limited drift velocity is the Fermi velocity for a degenerately doped silicon nanowire, increasing with carrier concentration but independent of the temperature.
|Item Type:||Book Section|
|Additional Information:||International Conference on Nanoscience and Nanotechnology, Nano-SciTech 2008; Selangor; 18 November 2008 through 21 November 2008; ISSN : 0094243X|
|Uncontrolled Keywords:||drifts velocity, P-type nanowire, velocity degenerate limit, velocity nondegenerate limit|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Ms Zalinda Shuratman|
|Deposited On:||20 Jul 2011 09:22|
|Last Modified:||20 Jul 2011 09:22|
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