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The drain velocity overshoot in an 80 nm metal-oxide-semiconductor field-effect transistor

Tan, Michael L. P. and Arora, Vijay K. and Saad, Ismail and Ahmadi, Mohammad Taghi and Ismail, Razali (2009) The drain velocity overshoot in an 80 nm metal-oxide-semiconductor field-effect transistor. Journal of Applied Physics, 105 (7). ISSN 0021-8979

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Official URL: http://dx.doi.org/10.1063/1.3091278


The current at the onset of saturation in a metal-oxide-semiconductor field-effect transistor (MOSFET) is shown to be limited by the drain velocity that increases toward its saturation value with the increase in the drain voltage. The saturation of velocity crops up as randomly oriented velocity vectors in equilibrium realign themselves to become unidirectional in the presence of an extremely high electric field. The intrinsic velocity, the ultimate saturation velocity, is the function of carrier concentration and temperature, consistent with the predictions of the ballistic transport. The presence of a quantum emission either by emission of a phonon or photon lowers the saturation velocity below its intrinsic value. Channel conduction beyond the quasisaturation point enhances due to the drain velocity overshoot as a result of enhanced drain electric field as drain voltage is increased. The excellent agreement with experimental data on an 80 nm channel, without using any artificial parameters, confirms the value of ballistic transport in a high electric field.

Item Type:Article
Uncontrolled Keywords:artificial parameters, ballistic transports, channel conductions, drain voltages, experimental datum, high electric fields, intrinsic velocities, metal-oxide-semiconductor field-effect transistors, mos fets, quasi saturations, saturation values, saturation velocities, velocity overshoot, velocity vectors
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:13134
Deposited By: Mrs Liza Porijo
Deposited On:19 Jul 2011 09:37
Last Modified:19 Jul 2011 09:37

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