Ismail, Razali and Fallahpour, Amir Hossein and Ahmadi, Mohammad Taghi (2009) Analytical study of drift velocity in N-type silicon nanowires. In: 2009 1st Asia Symposium on Quality Electronic Design, ASQED 2009. Article number 5206261 . IEEE Explore, Kuala Lumpur, pp. 252-254. ISBN 978-142444952-1
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Official URL: http://dx.doi.org/10.1109/ASQED.2009.5206261
The limitations on carrier drift velocity due to high-field effect and randomly velocity vector in equilibrium is reported. The results are based on asymmetrical distribution function that converts randomness velocity vectors in zerofield to streamlined one in a very high electric field. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately doped Silicon nanowires. However, the ultimate drift velocity is the Fermi velocity for degenerately doped Silicon nanowires. Other important parameter in carrier transport phenomena, for nanoscale devices is quantum confinement effect that leads to one-dimensional behavior in silicon nanowire.
|Item Type:||Book Section|
|Additional Information:||2009 1st Asia Symposium on Quality Electronic Design, ASQED 2009; Kuala Lumpur; 15 July 2009 through 16 July 2009|
|Uncontrolled Keywords:||degenerate limit, drift velocity, silicon nanowire|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Ms Zalinda Shuratman|
|Deposited On:||18 Jul 2011 01:41|
|Last Modified:||18 Jul 2011 01:41|
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