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Analytical study of carrier statistic in 2-dimensional nanoscale P-MOS

Ismail, Razali and Riyadi, Munawar Agus and Ahmadi, M. Taghi and Saad, Ismail R. (2009) Analytical study of carrier statistic in 2-dimensional nanoscale P-MOS. In: AIP Conference Proceedings. American Institute of Physics, Selangor, pp. 89-92. ISBN 978-073540673-5

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Official URL: http://dx.doi.org/10.1063/1.3160276


The carrier statistics for 2-dimensional (2-D) p-type nanostructure was elaborated, especially for p-MOSFET. According to the energy band diagram, the effective mass (m*) in the p-type silicon is mostly dominated by heavy hole because of the large gap between heavy hole and light hole in k = 0. The carrier concentration in 2-D was obtained using the calculated density of state, based on the Fermi - Dirac statistic on the order of zero ( I0 ). In the nondegenerate regime the carrier statistic results replicate the form the Boltzmann statistics. However, the results vary in degenerate regime, which result in the presence of ?v. The results for 2-D carrier statistic were numerically computed, and the comparison of the carrier statistic for degenerate and non-degenerate regime is presented, along with its respective Fermi-Dirac integral. It is also found that the density of state of hole in 2-D p-MOSFET is independent of the temperature.

Item Type:Book Section
Additional Information:International Conference on Nanoscience and Nanotechnology, Nano-SciTech 2008; Selangor; 18 November 2008 through 21 November 2008; ISSN : 0094243X
Uncontrolled Keywords:2-dimensional, carrier statistic, fermi-dirac integral, nanoscale device modelling
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:13077
Deposited By: Zalinda Shuratman
Deposited On:18 Jul 2011 01:44
Last Modified:18 Jul 2011 01:44

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