Riyadi, Munawar Agus and Ahmadi, Mohammad Taghi and Suseno, Jatmiko E. and Siew, Kang Eng and Saad, Ismail and Ismail, Razali and Arora, Vijay K. (2009) Physics-based simulation of carrier velocity in 2-dimensional p-type MOSFET. In: Proceedings - 2009 3rd Asia International Conference on Modelling and Simulation, AMS 2009. Institute of Electrical and Electronics Engineers, New York, 735 -738. ISBN 978-076953648-4
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Official URL: http://dx.doi.org/10.1109/AMS.2009.26
Abstract
The carrier velocity for 2-dimensional (2-D) p-type nanostructure was simulated in this paper. According to the energy band diagram, the effective mass (m*) in the p-type silicon is mostly dominated by heavy hole because of the large gap between heavy hole and light hole in k = 0. The carrier concentration calculation for 2-D, based on the Fermi - Dirac statistic on the order of zero (0 ), was applied to obtain the intrinsic velocity of carrier, in the term of thermal velocity vth. The results for 2-D carrier velocity were modeled and simulated, and the comparison for degenerate and non-degenerate regime is presented for various temperature and concentration. It is revealed that the velocity is strongly dependent on concentration and becomes independent of temperature at high concentration.
| Item Type: | Book Section |
|---|---|
| Additional Information: | 2009 3rd Asia International Conference on Modelling and Simulation, AMS 2009; Bandung, Bali; 25 May 2009 through 26 May 2009 |
| Uncontrolled Keywords: | carrier velocity, effective mass, energy-band diagram, fermi-dirac statistics, heavy holes, high concentration, intrinsic velocity, light holes, MOS-FET, p-type, p-type silicon, physics-based simulation, thermal velocity |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 13053 |
| Deposited By: | Liza Porijo |
| Deposited On: | 15 Jul 2011 01:42 |
| Last Modified: | 15 Jul 2011 01:42 |
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