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Physics-based simulation of carrier velocity in 2-dimensional p-type MOSFET

Riyadi, Munawar Agus and Ahmadi, Mohammad Taghi and Suseno, Jatmiko E. and Siew, Kang Eng and Saad, Ismail and Ismail, Razali and Arora, Vijay K. (2009) Physics-based simulation of carrier velocity in 2-dimensional p-type MOSFET. In: Proceedings - 2009 3rd Asia International Conference on Modelling and Simulation, AMS 2009. Institute of Electrical and Electronics Engineers, New York, 735 -738. ISBN 978-076953648-4

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Official URL: http://dx.doi.org/10.1109/AMS.2009.26

Abstract

The carrier velocity for 2-dimensional (2-D) p-type nanostructure was simulated in this paper. According to the energy band diagram, the effective mass (m*) in the p-type silicon is mostly dominated by heavy hole because of the large gap between heavy hole and light hole in k = 0. The carrier concentration calculation for 2-D, based on the Fermi - Dirac statistic on the order of zero (0 ), was applied to obtain the intrinsic velocity of carrier, in the term of thermal velocity vth. The results for 2-D carrier velocity were modeled and simulated, and the comparison for degenerate and non-degenerate regime is presented for various temperature and concentration. It is revealed that the velocity is strongly dependent on concentration and becomes independent of temperature at high concentration.

Item Type:Book Section
Additional Information:2009 3rd Asia International Conference on Modelling and Simulation, AMS 2009; Bandung, Bali; 25 May 2009 through 26 May 2009
Uncontrolled Keywords:carrier velocity, effective mass, energy-band diagram, fermi-dirac statistics, heavy holes, high concentration, intrinsic velocity, light holes, MOS-FET, p-type, p-type silicon, physics-based simulation, thermal velocity
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:13053
Deposited By: Mrs Liza Porijo
Deposited On:15 Jul 2011 01:42
Last Modified:15 Jul 2011 01:42

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