Universiti Teknologi Malaysia Institutional Repository

Odd harmonic responses in two-dimensional AlGaAs/GaAs HEMT devices due to plasma wave interaction

Hashim, Abdul Manaf and Mohd. Ahir, Zon Fazlila and Kasai, Seiya and Hasegawa, Hideki (2009) Odd harmonic responses in two-dimensional AlGaAs/GaAs HEMT devices due to plasma wave interaction. In: AIP Conference Proceedings. American Institute of Physics, USA, 328 -335. ISBN 978-073540687-2

Full text not available from this repository.

Official URL: http://dx.doi.org/10.1063/1.3192262


Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, ?p lie in the terahertz (THz) range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short- channel High-Electron-Mobility Transistor (HEMT) and the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results.

Item Type:Book Section
Additional Information:3rd International Meeting on Frontiers in Physics, IMFP 2009; Kuala Lumpur; 12 January 2009 through 16 January 2009
Uncontrolled Keywords:gaas, HEMT, non-drifting plasma, surface plasma wave, thz device
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:13025
Deposited By: Liza Porijo
Deposited On:14 Jul 2011 01:27
Last Modified:04 Oct 2017 07:24

Repository Staff Only: item control page