Hashim, Abdul Manaf and Mohd. Ahir, Zon Fazlila and Kasai, Seiya and Hasegawa, Hideki (2009) Odd harmonic responses in two-dimensional AlGaAs/GaAs HEMT devices due to plasma wave interaction. In: AIP Conference Proceedings. American Institute of Physics, USA, 328 -335. ISBN 978-073540687-2
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Official URL: http://dx.doi.org/10.1063/1.3192262
Abstract
Plasma waves are oscillations of electron density in time and space, and in deep submicron field effect transistors, typical plasma frequencies, ?p lie in the terahertz (THz) range and do not involve any quantum transitions. Hence, using plasma wave excitation for detection and/or generation of THz oscillations is a very promising approach. In this paper, the investigation of plasma wave interaction between the plasma waves propagating in a short- channel High-Electron-Mobility Transistor (HEMT) and the radiated electromagnetic waves was carried out. Experimentally, we have demonstrated the detection of the terahertz (THz) radiation by an AlGaAs/GaAs HEMT up to third harmonic at room temperature and their resonant responses show very good agreement with the calculated results.
| Item Type: | Book Section |
|---|---|
| Additional Information: | 3rd International Meeting on Frontiers in Physics, IMFP 2009; Kuala Lumpur; 12 January 2009 through 16 January 2009 |
| Uncontrolled Keywords: | gaas, HEMT, non-drifting plasma, surface plasma wave, thz device |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 13025 |
| Deposited By: | Liza Porijo |
| Deposited On: | 14 Jul 2011 01:27 |
| Last Modified: | 04 Oct 2017 07:24 |
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