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Numerical study of carrier velocity for p-type strained silicon MOSFET

Heong, Y. W. and Ahmadi, M. T. and Suseno, J. E. and Ismail, R. (2009) Numerical study of carrier velocity for p-type strained silicon MOSFET. In: Technical Proceedings of the 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009. The Nano Science and Technology Institute (NSTI), USA, 624 -627. ISBN 978-143981783-4

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Abstract

Strained induced in the silicon channel layer provides lower effective mass and suppresses intervalley scattering. In this paper, a numerical study of carrier concentration for P-type strained Silicon MOS is presented. Density of state proportion of Fermi-Dirac integral that covers the carrier statistics to all degenerate level is studied and its limits are obtained. In the nondegenerate regime the results replicate Boltzmann statistic and its result is vary in degenerate regime. The Fermi energy with respect to the transformed band edge is a function of carrier concentration for quasi two dimensional strained Silicon PMOS. Based on the Fermi - Dirac statistic, density of state the carrier concentration is obtained. Fermi energy is a function of temperature that independent of the carrier concentration in the nondegenrate regime. In the other strongly degenerate, the Fermi energy is a function of carrier concentration appropriate for given dimensionality, but is independent of temperature. The limitations on carrier drift due to high-field streamlining of otherwise randomly velocity vector in equilibrium is reported. The results are based on asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non- degenerately doped nanostructure. However, the ultimate drift velocity is the Fermi velocity for degenerately doped nanostructures.

Item Type:Book Section
Additional Information:Nanotechnology 2009: Biofuels, Renewable Energy, Coatings, Fluidics and Compact Modeling - 2009 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2009; Houston, TX; 3 May 2009 through 7 May 2009
Uncontrolled Keywords:carrier velocity, numerical study, strained silicon
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:13023
Deposited By: Mrs Liza Porijo
Deposited On:13 Jul 2011 02:10
Last Modified:13 Jul 2011 02:10

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