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Morphology and structure of self-assembled inxGa1-xAs quantum dots grown on gaAs (100) using MOCVD

Zulkafli, Othaman and Didik, Aryanto and Abd. Khamim, Ismail (2009) Morphology and structure of self-assembled inxGa1-xAs quantum dots grown on gaAs (100) using MOCVD. In: Nanoscience And Nanotechnology: International Conference on Nanoscience and Nanotechnology—2008. American Institute of Physics, USA, pp. 36-40. ISBN 978-0-7354-0673-5

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Official URL: http://dx.doi.org/10.1063/1.3160166

Abstract

Stacked InxGa1-xAs quantum dots (QDs) were grown by metal-organic chemical vapor deposition (MOCVD) via Stranski -Krastanov growth mode. AFM images show that the QDs structures were formed and the stacked structure of InxGa1-xAs QDs were confirmed by the HR-XRD analysis. Composition of the dots on the top most layers was related to the number of stack layers. The observed PL peak position was blue-shifted due to different number of stacked QDs. The PL intensity also dramatically increase, which shows the possibility of the QDs application in optical devices at room temperature

Item Type:Book Section
Uncontrolled Keywords:quantum dots, chemical vapor deposition, x-ray diffraction, scattering
Subjects:Q Science > QC Physics
Divisions:Science
ID Code:12992
Deposited By: Mrs Liza Porijo
Deposited On:12 Jul 2011 01:25
Last Modified:12 Jul 2011 01:25

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