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Morphological and electrical characterization of gaas nanowires

Muhammad, Rosnita and Othaman, Zulkafli and Wahab, Yussof and Sakrani, Samsudi (2009) Morphological and electrical characterization of gaas nanowires. In: AIP Conference Proceedings. American Institute of Physics, USA, pp. 344-347. ISBN 978-073540687-2

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Official URL: http://dx.doi.org/10.1063/1.3192266


GaAs nanowires were grown using metal organic chemical vapor deposition (MOCVD) system at low pressure reactor chamber. The growth follows the vapor-liquid solid mechanism by applying nanoparticle gold colloid on the (111)B GaAs substrate. The growth process were done at temperatures ranging from 380 to 600°C. The prepared samples were characterized using scanning electron microscopy, SEM and conductive atomic force microscopy, CAFM. It shows that GaAs nanowires grown at lower temperatures were rod- shaped and increasingly tapered with increasing growth temperature. Electrical measurements on individual GaAs nanowires indicate ohmic characteristic for samples prepared at 440°C, while oscillation current occured for GaAs nanowire with higher growth temperatures. These properties of GaAs nanowires can be guided to provide an opportunity for direct integration of high performance III-V semiconductor nanoscale devices.

Item Type:Book Section
Additional Information:ISBN: 978-073540687-2; 3rd International Meeting on Frontiers in Physics, IMFP 2009; Kuala Lumpur; 12 January 2009 through 16 January 2009
Uncontrolled Keywords:conductive AFM, gaas, nanowire, vapor-liquid solid
Subjects:Q Science > QC Physics
ID Code:12983
Deposited By: Liza Porijo
Deposited On:12 Jul 2011 01:34
Last Modified:12 Jul 2011 01:34

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