Muhammad, Rosnita and Othaman, Zulkafli and Wahab, Yussof and Sakrani, Samsudi (2009) Morphological and electrical characterization of gaas nanowires. In: AIP Conference Proceedings. American Institute of Physics, USA, pp. 344-347. ISBN 978-073540687-2
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Official URL: http://dx.doi.org/10.1063/1.3192266
GaAs nanowires were grown using metal organic chemical vapor deposition (MOCVD) system at low pressure reactor chamber. The growth follows the vapor-liquid solid mechanism by applying nanoparticle gold colloid on the (111)B GaAs substrate. The growth process were done at temperatures ranging from 380 to 600°C. The prepared samples were characterized using scanning electron microscopy, SEM and conductive atomic force microscopy, CAFM. It shows that GaAs nanowires grown at lower temperatures were rod- shaped and increasingly tapered with increasing growth temperature. Electrical measurements on individual GaAs nanowires indicate ohmic characteristic for samples prepared at 440°C, while oscillation current occured for GaAs nanowire with higher growth temperatures. These properties of GaAs nanowires can be guided to provide an opportunity for direct integration of high performance III-V semiconductor nanoscale devices.
|Item Type:||Book Section|
|Additional Information:||ISBN: 978-073540687-2; 3rd International Meeting on Frontiers in Physics, IMFP 2009; Kuala Lumpur; 12 January 2009 through 16 January 2009|
|Uncontrolled Keywords:||conductive AFM, gaas, nanowire, vapor-liquid solid|
|Subjects:||Q Science > QC Physics|
|Deposited By:||Liza Porijo|
|Deposited On:||12 Jul 2011 01:34|
|Last Modified:||12 Jul 2011 01:34|
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