Ismail, Muhamad Amri and Md Nasir, Iskhandar and Ismail, Razali (2009) Modeling of temperature variations in MOSFET mismatch for circuit simulations. In: 2009 1st Asia Symposium on Quality Electronic Design, ASQED 2009. Institute of Electrical and Electronics Engineers, New York, 357 -362. ISBN 978-142444952-1
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Official URL: http://dx.doi.org/10.1109/ASQED.2009.5206238
Temperature effect is one of the critical factors in manufacturing variability which could affect the designed circuit. This paper presents a MOSFET mismatch model with the consideration of temperature variations using physical based SPICE model parameters. The model development includes the mismatch measurement at different temperatures and enhancement of standard device model card. Mismatch temperature coefficients with respect to threshold voltage and carrier mobility are used to improve the prediction of mismatch model. The comparison between measured and Monte Carlo simulated data is presented for the verification purpose. The model is applied into the circuit design example to show the significant of the extracted mismatch temperature coefficients.
|Item Type:||Book Section|
|Additional Information:||ISBN: 978-142444952-1; 2009 1st Asia Symposium on Quality Electronic Design, ASQED 2009; Kuala Lumpur; 15 July 2009 through 16 July 2009|
|Uncontrolled Keywords:||circuit designs, critical factors, device models, manufacturing variability, mismatch measurement, model development, MONTE CARLO, MOSFET mismatch, simulated data, SPICE model, temperature coefficient, temperature effects, temperature variation|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Liza Porijo|
|Deposited On:||10 Jul 2011 06:01|
|Last Modified:||10 Jul 2011 06:01|
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