Universiti Teknologi Malaysia Institutional Repository

Design of CMOS tunable image-rejection low-noise amplifier with active inductor

Lee, Ler Chun and Abu Khari , A’ain and Kordesch, Albert Victor Design of CMOS tunable image-rejection low-noise amplifier with active inductor. VLSI Design , 2008 . pp. 1-6. ISSN 1065-514X

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Official URL: http://dx.doi.org/10.1155/2008/479173

Abstract

A fully integrated CMOS tunable image-rejection low-noise amplifier (IRLNA) has been designed using Silterra's industry standard 0.18 µm RF CMOS process. The notch filter is designed using an active inductor. Measurement results show that the notch filter designed using active inductor contributes additional1.19 dB to the noise figure of the low-noise amplifier(LNA). A better result is possible if the active inductor is optimized. Since active inductors require less die area, the die area occupied by the IRLNA is not significantly different from a conventional LNA, which was designed for comparison. The proposed IRLNA exhibits S21 of 11.8 dB, S11 of-17.8 dB,S22 of-10.7 dB,and input 1 dB compression point of-12 dBm at3 GHz.

Item Type:Article
Uncontrolled Keywords:CMOS, low-noise amplifier, active inductor
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:Electrical Engineering
ID Code:12526
Deposited By: Liza Porijo
Deposited On:07 Jun 2011 10:10
Last Modified:07 Jun 2011 10:10

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