Arora, Vijay Kumar (2008) Ballistic quantum transport in nano devices and circuits. In: 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008. IEEE, New York, 573-578 . ISBN 978-142441573-1
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Official URL: http://dx.doi.org/10.1109/INEC.2008.4585553
Ohm's law, a linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a muro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage Vc (V>>Vc) triggering nonohmic behavior that results in ballistic current saturation. The saturation current is now controlled by ballistic (B) saturation velocity that is comparable to an appropriate thermal velocity for a nondegenerate and Fermi velocity for a degenerate system with given dimensionality. A quantum emission may lower this ballistic velocity. A review of the physics behind breakdown of Ohm's law and existence of quantum effects in engineering low-dimensional nanoelectronic devices is given.
|Item Type:||Book Section|
|Additional Information:||ISBN: 978-142441573-1; 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008; Shanghai; 24 March 2008 through 27 March 2008|
|Uncontrolled Keywords:||carrier statistics, cartesian, channel lengths, critical voltages, high electric fields, linear currents, nano devices, nano scaling, ohm's law, quantum effects, quantum transports, reduced dimensionality, networks (circuits)|
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering|
|Deposited By:||Liza Porijo|
|Deposited On:||06 Jun 2011 08:42|
|Last Modified:||06 Jun 2011 08:42|
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