Al-Douri, Y. and Abid, H. and Aourag, H. (2005) Correlation between the bulk modulus and the transition pressure in semiconductors. Materials Letters, 59 . 2032 -2034. ISSN 0167577X
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Official URL: http://dx.doi.org/10.1016/j.matlet.2005.02.011
The correlation between the bulk modulus B0 and the transition pressure in semiconductors was analyzed. The transition pressure from zinc blende to ß-Sn structure was used to calculate the bulk modulus. It was found that for the II-VI semiconductors, the differences between the experiment and the calculated values were less than 5% except for CdS and CdTe where the coincidence and emergence cases happened. It was also found the calculated estimations were larger than the measured values for the III-VI semiconductors except for GaP, and the tendency was similar for the II-VI semiconductors.
|Uncontrolled Keywords:||bulk modulus, semiconductor, transition pressure|
|Subjects:||Q Science > Q Science (General)|
|Deposited By:||S.N.Shahira Dahari|
|Deposited On:||01 Jun 2011 02:00|
|Last Modified:||13 Jun 2011 05:19|
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