Al-Douri, Y. and Abid, H. and Aourag, H. (2005) Correlation between the bulk modulus and the transition pressure in semiconductors. Materials Letters, 59 . 2032 -2034. ISSN 0167577X
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Official URL: http://dx.doi.org/10.1016/j.matlet.2005.02.011
Abstract
The correlation between the bulk modulus B0 and the transition pressure in semiconductors was analyzed. The transition pressure from zinc blende to ß-Sn structure was used to calculate the bulk modulus. It was found that for the II-VI semiconductors, the differences between the experiment and the calculated values were less than 5% except for CdS and CdTe where the coincidence and emergence cases happened. It was also found the calculated estimations were larger than the measured values for the III-VI semiconductors except for GaP, and the tendency was similar for the II-VI semiconductors.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | bulk modulus, semiconductor, transition pressure |
| Subjects: | Q Science > Q Science (General) |
| Divisions: | Science |
| ID Code: | 12430 |
| Deposited By: | S.N.Shahira Dahari |
| Deposited On: | 01 Jun 2011 02:00 |
| Last Modified: | 13 Jun 2011 05:19 |
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