The influence of RF sputtering power on optical and structural properties of AlN films for high power electronic applications

Abstract

The structural and optical properties Aluminum Nitride (AlN) thin film deposited is mainly influence by many depositions condition ie. RF sputtering power. In this work, the AlN thin films were synthesized on a silicon wafer as a substrate at ambient temperature under different RF sputtering power (150W, 175W, 200W, 225W, and 250W) by RF magnetron sputtering method. The influence of different RF sputtering power on crystal orientation and optical properties such as energy band gap on AlN thin films were examined using XRD, UV Vis spectroscopy. The analysis of the deposited AlN films revealed that the crystal quality and the optical bandgap of the AlN thin films increased as the RF sputtering power improved from 150W to 250W.