Hussin, Hanim and Wan Muhamad Hatta, Sharifah Fatmadiana and Soin, Norhayati and Abdul Wahab, Yasmin and Muhamad, Maizan and Alias, Nurul Ezaila (2023) NBTI defects characterization using energy profiling simulation technique. In: 14th IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2023, 28 August 2023 - 30 August 2023, Langkawi, Kedah, Malaysia.
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Official URL: http://dx.doi.org/10.1109/RSM59033.2023.10326770
Abstract
A numerical simulation framework to simulate the positive charges based on location of energy levels is conducted in this work. This framework utilizes an energy profiling approach, where the behavior of hole traps under stress conditions is studied. In this process, a recovery voltage is applied to facilitate charged hole traps release. The recovery voltage is incrementally increased in the positive direction, to move the Fermi level thus creating the desired energy spectrum. Experimental data suggests that the defect charges responsible for this phenomenon arise from various sources and simulation results able to probe these types of charges.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | energy profiling, NBTI, p-MOSFET, positively charged defect, reliability component |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 108358 |
| Deposited By: | Yanti Mohd Shah |
| Deposited On: | 27 Oct 2024 06:08 |
| Last Modified: | 27 Oct 2024 06:08 |
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