Wahab, Yussof and Yeong, Wai Woon and Deraman, Karim and Soh, Chew Beng and Muhammad, Rosnita (2006) Photoluminescence Studies of In0.5Ga0.5As/GaAs quantum dots. In: Proceedings of the 4th Annual Fundamental Science Seminar (AFSS 2006), 6th - 7th June 2006, Universiti Teknologi Malaysia, Skudai, Malaysia.
- Published Version
In this paper, we present an experiment study of the photoluminescence properties of self-assembled In0.5sGa0.5As/GaAs quantum dots (aDs). High quality In0.5Ga0.5As aDs were grown by using Metalorganic Chemical Vapor Deposition (MOCVD). The low temperature photoluminescence (PL) spectrum of the Ino.sGao:As quantum dots surrounded by GaAs exhibit an emission peak at 1.137 to 1.182eV and a narrow linewidth (FWHM). The PL peak energy and intensity are varied with the excitation powers. Room temperature PL shows slightly lower peak energy with a broader spectrum linewidth. The distribution of the peak energy, peak intensity, and FWHM for the whole sample was obtained by using the PL mapping method.
|Item Type:||Conference or Workshop Item (Paper)|
|Additional Information:||Excellence in R & D through advancement in fundamental sciences|
|Uncontrolled Keywords:||In0.5Ga0.5As quantum dots, MOCVD, photoluminescence|
|Subjects:||Q Science > QC Physics|
|Deposited By:||Ms Zalinda Shuratman|
|Deposited On:||12 Nov 2010 09:07|
|Last Modified:||12 Nov 2010 09:48|
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