Azman, Zulkifli and Nayan, Nafarizal and Othman, Nur Afiqah and Abu Bakar, Ahmad Shuhaimi and Mamat, Mohamad Hafiz and Mohd. Yusop, Mohd. Zamri and Ahmad, Muhammad Yazid (2023) Optical band gap and surface morphology of AlN thin-film sputtered by HiPIMS on glass substrate. In: 3rd International Conference on Electrical and Electronics Engineering 2021: Versatility of Electrical and Electronics Engineering Solutions for Sustainable Future, ICON3E 2021, 6 September 2021-7 September 2021, Virtual, Online, Johor Bahru, Johor, Malaysia.
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Official URL: http://dx.doi.org/10.1063/5.0124192
Abstract
Aluminium Nitride (AlN) thin-film on glass substrate were prepared by HiPIMS at different Ar to N2 ratio. The XRD pattern revealed the amorphous structure of AlN as compared to AlN on Si substrate. The optical band gap of AlN on glass derived from Tauc plot shows the optical band gap was inversely proportional to the N2 concentration where 3.90 eV for 50% N2 and 3.95 eV for 33% N2. The surface roughness for all samples were below than 2 nm where the lowest at 1.5:1 of Ar: N2 at 1.28 nm. Water contact angle shows the hydrophobic behaviour for all samples which shows the potential to be used in the transparent coating application.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | Aluminium Nitride (AlN), HiPIMS, N2 concentration |
| Subjects: | T Technology > TJ Mechanical engineering and machinery |
| Divisions: | Mechanical Engineering |
| ID Code: | 108228 |
| Deposited By: | Widya Wahid |
| Deposited On: | 11 Nov 2024 07:49 |
| Last Modified: | 11 Nov 2024 07:49 |
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