Ishak, Nurul Najihah and Mohamed Ali, Mohamed Sultan and Nayan, Nafarizal and Megat Hasnan, Megat Muhammad Ikhsan and Othman, Nur Afiqah and Ahmad, Mohd. Khairul and Abd. Hamed, Noor Kamalia and Mohd. Fazli, Fatin Izyani (2023) Investigation of GaN-Aln-Tio2nanoflower photoanode for dye-sensitized solar cell application. In: 3rd International Conference on Electrical and Electronics Engineering 2021: Versatility of Electrical and Electronics Engineering Solutions for Sustainable Future, ICON3E 2021, 6 September 2021 - 7 September 2021, Johor, Malaysia - Virtual, Online.
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Official URL: http://dx.doi.org/10.1063/5.0124193
Abstract
This work presents a preliminary study of the GaN-AlN-TiO2 nanoflower architecture potential for the dye-sensitized solar cell (DSSC) application. The TiO2 nanoflowers are prepared using hydrothermal method whilst the GaN-AlN is deposited on the prepared TiO2 nanoflower using nitrogen reactive RF sputtering method. TiO2 and GaN-AlN-TiO2 are compared in terms of elemental, structural, surface morphology and DSSC performance by using XRD, FESEM, EDS, solar Simulator under 1M solar illumination and electrical impedance analysis (EIS). The efficiency results showed that the deposited GaN-AlN on the TiO2 nanoflower increased 0.13% than pure TiO2 nanoflower. This result also showed that GaN-AlN can be used as considerable potential candidate for DSSC photoanode layer upon development.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Uncontrolled Keywords: | Electric measurements, Sputter deposition, Nanomaterials, Dye sensitized solar cell, Photoelectrochemical cells, Chemical synthesis. |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Electrical Engineering |
| ID Code: | 107493 |
| Deposited By: | Muhamad Idham Sulong |
| Deposited On: | 23 Sep 2024 03:10 |
| Last Modified: | 23 Sep 2024 03:10 |
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